Impact of Symmetry on Anisotropic Magnetoresistance in Textured Ferromagnetic Thin Films

Philippi-Kobs, A.; Farhadi, A.; Matheis, L.; Lott, D.; Chuvilin, A.; Oepen, H.P.

Journalpaper

Impact of Symmetry on Anisotropic Magnetoresistance in Textured Ferromagnetic Thin Films

Abstract

We report on the magnetoresistance of textured films consisting of 3d-ferromagnetic layers sandwiched by Pt. While the conventional cos2φ behavior of the anisotropic magnetoresistance (AMR) is found when the magnetization M is varied in the film plane, cos2nθ contributions (2n≤6) exist for rotating M in the plane perpendicular to the current. This finding is explained by the symmetry-adapted modeling of AMR of textured films demonstrating that the cos2θ behavior cannot be used as a fingerprint for the presence of spin Hall magnetoresistance (SMR). Further, the interfacial MR contributions for Pt/Ni/Pt contradict the SMR behavior confirming the dominant role of AMR in all-metallic systems.

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URL: https://publications.hereon.de/id/37255/
Authors:Philippi-Kobs, A., Farhadi, A., Matheis, L., Lott, D., Chuvilin, A., Oepen, H.P.
Year:2019
In: Physical Review Letters
Volume:123
Issue:13
Pages:137201
Publisher:APS, Ridge, NY
Type:Journalpaper
ISSN: 0031-9007
Cite as: Philippi-Kobs, A.; Farhadi, A.; Matheis, L.; Lott, D.; Chuvilin, A.; Oepen, H.P.: Impact of Symmetry on Anisotropic Magnetoresistance in Textured Ferromagnetic Thin Films. In: Physical Review Letters. Vol. 123 (2019) 13, 137201. (DOI: /10.1103/PhysRevLett.123.137201)